BASiC Semiconductor
Shenzhen BASiC Semiconductor LTD., the leading enterprise of Wide-band Gap semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices, and set up R&D centers in Nanshan Shenzhen, Pingshan Shenzhen, Pukou Nanjing, Stockholm Sweden and Nagoya Japan. BASiC has established a world-class R&D team, the core members are PhDs from University of Cambridge, KTH Royal Institute of Technology, Tsinghua University and other well-known universities.
BASiC master the global advanced core technology of SiC. The R&D fields cover the whole industrial chain of SiC power devices, such as epitaxial preparation, chip design, manufacturing process, packaging test and driver circuit application etc. Successively launched series of products such as full-current and full voltage range SiC schottky diode, the first 1200V SiC MOSFET which has passed the reliability test of industrial level in China and automotive level SiC power module etc. The products have reached the international advanced level, which are widely used in new energy generation, EV, railway traction, smart grids, defense industry and other fields.
Model
Images | Mfr.Part # | Category/Manufacturer/Package/Packaging | RoHS | Price | Quantity | Operate |
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| B1M160120HC1.2kV 20A 160mΩ@20V,10A 118W 2.7V@2.5mA 18pF@1kV N Channel 1.1nF@1kV 60nC@20V -55℃~+150℃@(Tj) TO-247-3L MOSFETs ROHS | Category：MOSFETs Manufacturer：BASiC Semiconductor Package：TO-247-3L Packaging：Tube |  | |||
| B2D10065K TO-220 Pre-ordered Products ROHS | Category：Pre-ordered Products Manufacturer：BASiC Semiconductor Package：TO-220 Packaging：Tube | | |||
| B2D06065K B2D06065K | Category：Pre-ordered Products Manufacturer：BASiC Semiconductor Package：TO-220 Packaging：Tube | | |||
| B2D08065K B2D08065K | Category：Pre-ordered Products Manufacturer：BASiC Semiconductor Package：TO-220 Packaging：Tube | | |||
| B2D06065Q B2D06065Q | Category：Pre-ordered Products Manufacturer：BASiC Semiconductor Package：DFN(8x8) Packaging：Tape | | |||
| B1D40065HC B1D40065HC | Category：Schottky Barrier Diodes (SBD) Manufacturer：BASiC Semiconductor Package：TO-247-3L Packaging：Tube | | |||
| B1D10065E70μA@650V 650V Single 1.44V@10A 29A TO-252 Schottky Barrier Diodes (SBD) ROHS | Category：Schottky Barrier Diodes (SBD) Manufacturer：BASiC Semiconductor Package：TO-252 Packaging：Tube | | |||
| B1D10120K4.5μA@1.2kV 1.2kV Single 1.47V@10A 35A TO-220 Schottky Barrier Diodes (SBD) ROHS | Category：Schottky Barrier Diodes (SBD) Manufacturer：BASiC Semiconductor Package：TO-220 Packaging：Tube | | |||
| B1D06065KF650V 1.45V@6A 10.6A TO-220F Schottky Barrier Diodes (SBD) ROHS | Category：Schottky Barrier Diodes (SBD) Manufacturer：BASiC Semiconductor Package：TO-220F Packaging：Tube | | |||
| B1D10120F B1D10120F | Category：Schottky Barrier Diodes (SBD) Manufacturer：BASiC Semiconductor Package：TO-263-2L Packaging：Tube | |
Manufacturers introduction
