Manufacturer
Please Input
- Spansion (Cypress Semiconductor)
- Fujitsu
- Cypress Semiconductor
Package
Please Input
- soic-8_150mil
- sop-8_150mil
- soic-8
- sop-8
- son-8
- soic-14_150mil
- soic-28
- sop-8_208mil
- tsop-48
- soic-8_39mm
- sop-16_300mil
- sop-28_300mil
- tdfn-8
- tsop-32
- tsop-44
- tsopii-44
Packaging
Please Input
- tape
- reel
- tube
- tray
- -
Images | Mfr.Part # | Category/Manufacturer/Package/Packaging | RoHS | Price | Quantity | Operate |
|---|
 | FM25V20A-DGIC FRAM 2MBIT SPI 40MHZ 8TDFN | Category：FRAM Manufacturer：Cypress Semiconductor Package：TDFN-8 Packaging：Tube |  | |||
| FM25V01A-GIC FRAM 128KBIT SPI 40MHZ 8SOIC | Category：FRAM Manufacturer：Spansion (Cypress Semiconductor) Package：SOIC-8 Packaging：Tube | | |||
| FM33256B-GTR2.7V ~ 3.6V SPI 256Kb (32K x 8) SOIC-14_150mil FRAM ROHS | Category：FRAM Manufacturer：Cypress Semiconductor Package：SOIC-14_150mil Packaging：Reel | | |||
 | MB85RS2MTAPNF-G-BDE1F-RAM 2Mbit FRAM, SPI, 1.7V 3.6V - SOP8 Tube | Category：FRAM Manufacturer：Fujitsu Package：SOP-8 Packaging：Tube | | |||
| MB85R1002ANC-GE13V ~ 3.6V Parallel 1Mb (64K x 16) TSOP-48 FRAM ROHS | Category：FRAM Manufacturer：Fujitsu Package：TSOP-48 Packaging：Tray | | |||
| MB85R1001ANC-GE13V ~ 3.6V Parallel 1Mb (128K x 8) TSOP-48 FRAM ROHS | Category：FRAM Manufacturer：Fujitsu Package：TSOP-48 Packaging：Tray | | |||
| MB85RC1MTPNF-G-JNE11.8V ~ 3.6V I2C 1Mb (128K x 8) SOP-8 FRAM ROHS | Category：FRAM Manufacturer：Fujitsu Package：SOP-8 Packaging：Reel | | |||
| MB85RS64TPN-G-AMEWE1IC FRAM 64KBIT SPI 10MHZ 8SON | Category：FRAM Manufacturer：Fujitsu Package：SON-8 Packaging：- | | |||
| MB85R4M2TFN-G-ASE11.8V ~ 3.6V Parallel 4Mb (256K x 16) TSOP-44 FRAM ROHS | Category：FRAM Manufacturer：Fujitsu Package：TSOP-44 Packaging：Reel | | |||
| MB85RS128TPNF-G-JNERE1 SOP-8 FRAM ROHS | Category：FRAM Manufacturer：Fujitsu Package：SOP-8 Packaging：Reel | |
1
2
3
4
7
FRAMFRAM, or ferroelectric random access memory, is a type of non-volatile memory that combines the fast access times of RAM with the non-volatility of flash memory. FRAM uses a ferroelectric material, such as lead zirconate titanate (PZT), to store data. Unlike other types of non-volatile memory, such as flash memory, FRAM does not require special programming or erasing operations, and it can be written to and read from in a similar manner to RAM. This makes FRAM an attractive option for applications that require fast access to large amounts of data, such as data logging, real-time data processing, and security applications. FRAM is also known for its high endurance, low power consumption, and radiation tolerance, which make it suitable for use in harsh environments.
