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BFR93AW,135RF TRANS NPN 12V 5GHZ SOT323-3
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Freescale Semiconductor, Inc. (NXP Semiconductors)
Package:
Packaging:
BFU725F,115RF TRANS NPN 2.8V 70GHZ 4DFP
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Freescale Semiconductor, Inc. (NXP Semiconductors)
Package:
Packaging:
2SC5347AE-TD-ERF TRANS NPN 12V 4.7GHZ PCP
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:onsemi
Package:
Packaging:
CEN1179RF TRANSISTOR TO-39
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Central Semiconductor
Package:
Packaging:
CP616-CM5160-CT20RF TRANSISTOR TO-39
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Central Semiconductor
Package:
Packaging:
CP617-CM4957-CMRF TRANSISTOR TO-39
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Central Semiconductor
Package:
Packaging:
2N3866 TIN/LEADRF TRANS NPN 30V 500MHZ TO39
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Central Semiconductor
Package:
Packaging:
44010RF POWER TRANSISTOR
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Microsemi
Package:
Packaging:
42126RF POWER TRANSISTOR
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Microsemi
Package:
Packaging:
MRF8372MR1TRANS NPN 16V 200MA
Category:Transistors - Bipolar (BJT) - RF
Manufacturer:Microsemi
Package:
Packaging:
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Transistors - Bipolar (BJT) - RFBipolar junction transistors (BJTs) are a type of transistor that uses both electrons and holes as charge carriers. RF (radio frequency) bipolar transistors are specialized BJTs that are designed for use in high-frequency radio frequency circuits, such as those used in wireless communication systems. RF bipolar transistors are commonly used in applications such as RF amplifiers, mixers, and oscillators. They offer high gain, low noise, and good linearity, making them suitable for a wide range of RF applications. Unlike MOSFETs (metal-oxide-semiconductor field-effect transistors), which are another type of transistor, BJTs are current-controlled devices, meaning that the current flowing through the transistor controls the flow of current through the device. This makes them well-suited for use in RF circuits where low-noise, high-gain performance is required.