GlobalFoundries receives US$30 million in US government funding to develop next-generation GaN-on-silicon

On October 17, GlobalFoundries announced that it has received $30 million in U.S. government funding to advance the development and production of next-generation gallium nitride on silicon (GaN) at its Vermont facility.

The $30 million in funding will enable GlobalFoundries to purchase tools and expand the development and implementation of 200mm GaN wafer fabrication. The ability to incorporate scale manufacturing of GaN into the factory further strengthens the factory's long-standing global leadership in RF semiconductor technology and positions GlobalFoundries as a leader in the manufacture of chips for high-power applications, including electric vehicles, industrial motors and energy applications .

It is reported that GlobalFoundries' factory in Vermont is one of the first major semiconductor production bases in the United States, with nearly 2,000 employees. The facility has a manufacturing capacity of over 600,000 wafers per year. Based on GlobalFoundries' differentiated technologies, chips are fabricated for use in smartphone, automotive and communications infrastructure applications around the world.