Samsung officially announced the mass production of the 8th generation V-NAND

On November 7, Samsung Electronics announced that it has started mass production of 1Tb (terabyte) triple-level cell (TLC) 8th-generation V-NAND with the highest storage density among Samsung products.

The new 1Tb V-NAND has the highest storage density among Samsung V-NAND, and can provide a larger capacity and higher density storage solution for global enterprise systems.

According to reports, Samsung's eighth-generation V-NAND uses 3D scaling technology, which not only reduces the surface area and height, but also avoids the interference between cells that usually occurs when shrinking.

Through 3D scaling technology, Samsung can significantly increase the storage density per wafer. Based on the latest NAND flash memory standard Toggle DDR 5.0 interface, Samsung's 8th generation V-NAND has an input and output (I/O) speed of up to 2.4Gbps (gigabits per second), which is 1.2 times higher than the previous generation, which can meet the Performance requirements for PCIe 4.0 and later PCIe 5.0.

Samsung said the 8th-generation V-NAND is expected to become the cornerstone of storage configurations, helping to expand the storage capacity of next-generation enterprise servers, and its application will also expand to the automotive market where reliability is particularly important.

It is reported that Samsung previously launched 512Gb TLC 8th-generation V-NAND at the 2022 Technology Day for the first time, with a 42% increase in bit density, and said that the world's highest-capacity 1Tb TLC V-NAND will be available to customers by the end of this year.

As the world's largest NAND Flash manufacturer, Samsung expects that by 2030, the number of NAND flash stacking layers will exceed 1,000 layers to better support future data-intensive technologies.