Infineon Bets on GaN Chips for Next-Gen Power Semiconductors as Market Growth is Predicted to Skyrocket

According to industry media reports, European chip manufacturer Infineon is betting on next-generation power semiconductors to stimulate growth in the wider chip market, which has been sluggish. Infineon's President of Power and Sensor Systems, Mr. White, said the company is particularly optimistic about Gallium Nitride (GaN) chips, which are expected to grow at a rate of 56% per year by 2027.

Yole predicts that the GaN RF device market will grow from $891 million in 2020 to $2.4 billion in 2026, with a compound annual growth rate of 18%. The GaN power device market is expected to grow from $46 million in 2020 to $1.1 billion in 2026, with a compound annual growth rate of 70%. Analysts suggest that Infineon's acquisition of GaN Systems reflects the future development prospects of GaN in applications such as automotive, data centers, and industry, as well as the potential for industry chain competition to enter a consolidation phase.

Among relevant listed companies:

SemiTech's GaN business team has achieved technological breakthroughs in materials and devices. The company has matured 6-8 inch GaN epitaxial material growth capabilities and sales have been realized in GaN device design through technical, application, and demand iteration.

Xinjieneng has completed the development of 650V/190mohm E-Mode GaN HEMT products, with all electrical parameters reaching domestic leading levels, and 100V/200V GaN products are under development.

It is important to note the potential growth in the GaN chip market and the development of relevant products by key companies. This information can inform product selection and sales strategies.