Nexperia Launches New High-Efficiency SiC Schottky Diode for Power Applications

Nexperia, a high-capacity production expert in the field of basic semiconductor components, has announced the launch of its 650V silicon carbide (SiC) Schottky diode on April 20th. The diode is designed to meet the demand for ultra-high performance, low loss, and high-efficiency power applications. This industrial-grade device can handle the challenges brought by high voltage and current applications, such as switch-mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, uninterrupted power supplies, and photovoltaic inverters while offering improved durability. For example, data centers that equip Nexperia's PSC1065K SiC Schottky diode power designs will achieve more stringent energy efficiency standards than those that solely use silicon-based solutions.

The PSC1065K features temperature-insensitive capacitance switching and zero-recovery performance, providing advanced performance and excellent quality factor (QC x VF). Its outstanding switching performance is almost unaffected by changes in current and switching speed. Additionally, the PSC1065K's merged PIN Schottky (MPS) structure also features other benefits. It has excellent surge current tolerance and requires no additional protection circuits, which significantly reduces system complexity. These characteristics enable hardware design engineers to achieve higher efficiency with smaller form factors in durable high-power applications. As a supplier of a range of high-quality semiconductor technology products, Nexperia has an excellent reputation and is trusted by design engineers.

This SiC Schottky diode uses a true two-pin (R2P) TO-220-2 through-hole power plastic package. Other packaging options include surface mount (DPAK R2P and D2PAK R2P) and true two-pin configuration through-hole (TO-247-2) packaging, enhancing reliability in high-voltage applications of up to 175°C.

Katrin Feurle, Senior Director of Nexperia's SiC Product Group, said: "Our high-performance SiC Schottky diodes outperform the solutions currently available, and we are proud of their excellent performance. As people's energy awareness grows, we are committed to bringing more choices and convenience to the market, meeting the significant increase in demand for high-capacity, high-efficiency applications."

Nexperia plans to continuously increase its SiC diode product portfolio, including 650V and 1200V working voltage ranges, current ranges of 6-20A, and automotive-grade devices. The new SiC diode is now available for sampling and began mass production recently.