Infineon Empowers Industrial Applications with Integrated 600V GaN HD-GIT Technology

Infineon Technologies has successfully integrated 600V GaN HD-GIT (Hybrid Drain-Embedded GaN with Integrated Gate Transistor) manufacturing into its production line. This advancement provides design engineers with the flexibility of both discrete and integrated power devices, catering to specific requirements for industrial applications compliant with JEDEC standards JESD47 and JESD22.

The available package options include DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81, and TSON-8, with Rds(on) values ranging from 42 to 340mΩ (maximum). In a half-bridge configuration, two GaN switches are housed in a TIQFN-28 package, with Rds(on) = 190 - 650mΩ max (x2). The single-channel variant in the thermally-enhanced TIQFN-21 spans from 130 to 340mΩ.

Both top-side and bottom-side cooled JEDEC-compliant packages are available, such as DSO-20-87 and DSO-20-85, respectively. Infineon highlights that the TSC power package meets high-power requirements in the market. For instance, IGOT60R042D1 (top-side cooled) and IGO60R042D1 (bottom-side cooled) have identical datasheets, featuring a 250W rating (25°C) and 0.5°C/W junction-to-case thermal resistance.

These advancements are expected to find applications in servers, telecommunications, solar power supply units, consumer chargers and adapters, motor drivers, televisions, monitors, and LED lighting.