Renesas Electronics Mass Producing SiC Power Semiconductors

According to foreign media reports, Japanese semiconductor giant Renesas Electronics recently announced its plans to start production of the next generation of power semiconductor products using Silicon Carbide (SiC) by 2025. The company intends to begin mass production at its Takasaki factory in Gunma Prefecture, which currently produces silicon-based power semiconductors. However, the specific investment amount and production scale have yet to be determined.

The report highlights that Silicon Carbide offers better heat resistance and voltage tolerance compared to traditional silicon. Power semiconductors using SiC experience minimal power losses, making them ideal for applications such as electric vehicles, where they can extend the driving range. In addition to electric vehicles, the use of SiC in renewable energy sectors like battery storage is also expected to expand.

Companies such as STMicroelectronics, Infineon, and Mitsubishi Electric are already positioning themselves in the SiC semiconductor market. While Renesas Electronics is relatively new to the field, CEO Hidetoshi Shibata stated during a press conference, "Although we were latecomers to the traditional power semiconductor market, we have gained recognition for our high efficiency, and SiC is no exception."

As part of Renesas Electronics' strategy, the company plans to outsource the production of cutting-edge logic semiconductors used in processing systems to foundries, as the development and investment costs for these systems are high. On the other hand, power semiconductors will be produced internally, with the Yamanashi factory, which was closed in 2014, set to resume operations in the first half of 2024 to manufacture silicon-based power semiconductors.