Infineon: Expanding SiC & GaN Production
Infineon is expanding its production of Silicon Carbide (SiC) devices in the United States. The company aims to establish its own SiC crystal production in Europe to ensure a stable supply. This move comes as part of Infineon's strategic focus on SiC and GaN technologies.
In January, Infineon signed a long-term agreement with Resonac Co., Ltd. to secure the supply of SiC materials for semiconductor components. The partnership includes the provision of 6-inch and 8-inch wafers, with a gradual transition to 8-inch wafer production.
To further strengthen its SiC supply chain, Infineon forged agreements with Tianke Heda and Tianyue Advanced Materials in May. These partnerships will enhance the availability of 6-inch SiC substrates and support Infineon's transition to 8-inch SiC wafers.
In addition to SiC, Infineon is also actively involved in the GaN sector. In March, the company announced its plan to acquire GaN Systems for $830 million, pending regulatory approvals. This strategic move will further strengthen Infineon's position in the GaN power technology market.
Expanding their collaborations, Infineon signed a memorandum of understanding with Hon Hai Precision Industry Co., Ltd. (Foxconn Group) in May. The partnership aims to foster long-term cooperation in the field of electric vehicles, focusing on implementing SiC technology in various high-power applications.
Moreover, Infineon is taking a leadership role in the European collaborative research project called ALL2GaN. This project, involving 45 partners, aims to develop integrated GaN power designs, from chips to modules, with a focus on the European supply chain. By leveraging artificial intelligence, the project aims to enhance the sustainability and secure supply of GaN power technology.
Overall, Infineon's strategic expansions in SiC and GaN technologies demonstrate its commitment to providing reliable and cutting-edge electronic components to customers and catering to the growing demand in various industries.
