Toshiba SiC Diodes: High Efficiency for Industrial Equipment

Toshiba Electronic Components and Storage Device Corporation (Toshiba) has unveiled its latest line of cutting-edge Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) designed for industrial equipment. The TRSxxx65H series, featuring 12 products at 650V, is now available for bulk shipments, with 7 models in TO-220-2L packaging and 5 models in DFN8×8 packaging.

These new SBDs incorporate a breakthrough metal and optimize the JBS structure found in the previous generation. The result is an exceptional forward voltage of 1.2V (typical value), outperforming the previous generation by 17%. Additionally, the devices strike a perfect balance between forward voltage and total capacitance charge, as well as forward voltage and reverse current, leading to reduced power consumption and enhanced equipment efficiency.

Key Applications:

· Switching power supplies

· Electric vehicle charging stations

· Photovoltaic inverters

Notable Features:

· Industry-leading low forward voltage: VF = 1.2V (typical value) (IF = IF(DC))

· Low reverse current: TRS6E65H IR = 1.1μA (typical value) (VR = 650V)

· Low total capacitance charge: TRS6E65H QC = 17nC (typical value) (VR = 400V, f = 1MHz)

Toshiba's TRSxxx65H series of SiC SBDs offer unmatched performance and efficiency, making them an ideal choice for various electronic components distributors operating in the industrial equipment sector.