ROHM EcoGaN™ Power Stage IC: BM3G0xxMUV-LB

ROHM, a well-known global semiconductor manufacturer based in Kyoto, Japan, has introduced an exciting new product called "BM3G0xxMUV-LB" (BM3G015MUV-LB, BM3G007MUV-LB). This innovative Power Stage IC is designed for data servers, industrial equipment, and consumer electronic devices such as AC adapters. It combines a 650V GaN HEMT and a high-performance gate driver to achieve efficient power conversion.

In response to the increasing demand for energy-efficient solutions in consumer electronics and industrial applications, GaN HEMTs have emerged as a promising technology. GaN HEMTs significantly enhance power conversion efficiency and allow for device miniaturization. However, their gate driving complexity necessitates the use of dedicated gate drivers.

ROHM has leveraged its expertise in power and analog semiconductor technologies to develop the groundbreaking Power Stage IC that integrates both GaN HEMTs and gate drivers. This development paves the way for easy installation and adoption of GaN devices in various applications.

The new product boasts a host of features, including a next-generation 650V GaN HEMT, a dedicated gate driver optimized for GaN HEMT performance, additional functionalities, and peripheral components. Notably, the product supports a wide drive voltage range of 2.5V to 30V, making it compatible with various control ICs for one-side power supply. This makes it an attractive alternative to traditional Si MOSFETs, as it can significantly reduce device size by approximately 99% and lower power losses by around 55%.

By offering more energy-efficient and compact solutions, ROHM's GaN HEMT-based Power Stage IC addresses the growing demand for sustainable power sources in modern electronics and industrial applications. Its cutting-edge technology is set to revolutionize the power semiconductor market, making electronic devices more environmentally friendly and power-efficient.