321-Layer NAND Flash: SK Hynix Redefines Storage!

Santa Clara, USA — August 9, 2023 — SK Hynix, a trailblazer in cutting-edge electronics, wowed attendees at the 2023 Flash Memory Summit in Santa Clara, California. The star of the show was the world's first 321-layer NAND flash, a technological marvel that positions SK Hynix as a forefront developer of high-performance NAND solutions tailored for the AI-driven era.

In addition to this breakthrough, SK Hynix introduced an array of next-generation NAND solutions, including PCIe Gen 5 and UFS 4.0 compatibility. With an unwavering commitment to innovation, SK Hynix is dedicated to crafting NAND solutions that meet the evolving demands of the AI landscape.

This exciting announcement follows SK Hynix's successful launch of 321-layer 4D NAND samples, making it the pioneer in developing NAND flash with over 300 layers. The company has set its sights on refining the 321-layer NAND flash and initiating mass production in the first half of 2025.

Leveraging its experience from the advanced 238-layer NAND, SK Hynix is steadily advancing in the research and development of the 321-layer NAND. This strategic move aligns with the company's goal to lead the market into the realm of 300-layer NAND technology.

The efficiency of the 321-layer 1TB TLC NAND outshines its predecessor, the 238-layer 512Gb, by an impressive 59%. This leap can be attributed to the heightened stacking of data storage units, resulting in increased storage capacity per chip and a remarkable boost in chip output per wafer.

As the demand for generative AI technologies surges, exemplified by the popularity of ChatGPT and similar tools, the need for high-performance, capacious storage solutions has skyrocketed. Responding to this need, SK Hynix has unveiled its next-gen NAND product solutions, featuring enterprise-grade Solid State Drives (eSSDs) equipped with PCIe 5 (Gen5) interface and UFS 4.0 compatibility.

In a testament to its ongoing commitment to innovation, SK Hynix also revealed plans for the development of PCI 6.0 and UFS 5.0 products. These upcoming offerings are set to solidify the company's pioneering role in shaping the market's future.

During his keynote address, Mr. Choi Jung-Dae, Vice President of NAND Flash Development at SK Hynix, shared his enthusiasm, "Our fifth-generation 321-layer 4D NAND flash development cements our leadership in the NAND technology landscape. SK Hynix remains dedicated to introducing high-performance, capacious NAND products tailored to the needs of the AI era, further extending our industry leadership."