SK Hynix's Ultimate HBM3E: Transforming AI Performance

August 21, 2023 - SK Hynix, a global leader in memory technology, proudly announces the successful development of the revolutionary HBM3E DRAM product, tailored for AI applications. This latest innovation marks a significant advancement in high-performance memory solutions.

HBM3E, an acronym for High Bandwidth Memory 3E, builds upon the High Bandwidth Memory (HBM) architecture, featuring vertical stacking of multiple DRAM modules. This unique design empowers it to deliver a remarkable boost in data processing speeds, thus presenting a highly valuable and high-performance memory solution.

"We have leveraged our extensive experience in HBM3 production to bring forth HBM3E, a trailblazing memory product that stands as a testament to our commitment to innovation and excellence," emphasized a spokesperson from SK Hynix. "With the largest-scale HBM supply expertise and production maturity in the industry, we are primed to initiate HBM3E mass production in the first half of the upcoming year. This further solidifies our position as a pioneer in AI memory technology."

HBM3E boasts unmatched speed specifications, capable of processing an impressive 1.15 terabytes of data per second. To put this in perspective, this data processing rate equates to handling 230 Full HD (FHD) movies, each with a size of 5 gigabytes, in just one second.

Moreover, SK Hynix's technical team has incorporated the Advanced MR-MUF technology into HBM3E, resulting in a significant 10% improvement in heat dissipation compared to its predecessors. Notably, HBM3E also offers backward compatibility, facilitating its seamless integration into systems designed with the HBM3 architecture.

As part of the collaboration, Ian Buck, Vice President of NVIDIA's Hyperscale and HPC division, expressed anticipation for the continued partnership. "Our collaboration with SK Hynix in the HBM domain has been marked by mutual innovation. We look forward to the contributions of HBM3E to the next phase of AI computing."

Yoon Sung-soo, Vice President of SK Hynix's DRAM Product Planning, articulated the strategic significance of HBM3E. "Through the introduction of HBM3E, we've not only enhanced the comprehensiveness of our product offerings in line with AI advancements but also solidified our leadership in the competitive memory market. This launch propels us towards even greater accomplishments."

SK Hynix's groundbreaking HBM3E DRAM product encapsulates the essence of innovation, performance, and compatibility, making it an instrumental addition to the evolving landscape of AI memory solutions.