Toshiba’s First 2200V SiC MOSFET Module for Efficient Power Systems

August 29, 2023

Toshiba Electronic Components and Storage Device Corporation, a trailblazer in cutting-edge electronics, proudly announces the debut of an innovation that sets a new benchmark in the realm of power components — the 2200V Double Silicon Carbide (SiC) MOSFET module, named "MG250YD2YMS3." This pioneering module is built on Toshiba's 3rd generation SiC MOSFET chip technology, featuring a remarkable rated drain current (DC) of 250A. Engineered for applications demanding a DC 1500V power supply, such as photovoltaic power generation and energy storage systems, the MG250YD2YMS3 is now available for large-scale distribution, marking a significant stride towards higher efficiency and performance in power systems.

In contrast to conventional industrial applications operating at DC 1000V or lower, the MG250YD2YMS3 is designed to accommodate the emerging trend of DC 1500V utilization expected to shape the industry landscape in the coming years. This forward-looking approach underscores Toshiba's commitment to innovation and responsiveness to evolving market demands.

The MG250YD2YMS3 stands as a paragon of technological advancement, characterized by low conduction losses and a remarkably low drain-source on-state voltage (VDS(on)sense) of 0.7V (typical) [2]. Furthermore, it boasts minimized turn-on and turn-off losses, measuring at 14mJ (typical) [3] and 11mJ (typical) [3] respectively, representing an approximate 90% reduction when juxtaposed with conventional Silicon (Si) IGBTs [4]. These exceptional attributes collectively contribute to enhanced operational efficiency, ensuring optimal performance in diverse power applications.

One notable advantage of the MG250YD2YMS3 is its ability to facilitate compact designs through diminished switching losses. By adopting this module, users can streamline their systems with fewer components, enabling the transition from traditional three-level circuits to simplified, more efficient two-level configurations.

Toshiba remains at the forefront of innovation, unwavering in its commitment to deliver solutions that seamlessly integrate high efficiency and compact design, effectively addressing the dynamic needs of modern power systems.

Note:

[1] Sample range limited to Double SiC MOSFET modules. Data based on Toshiba's research as of August 2023.

[2] Measurement conditions: ID = 250A, VGS = +20V, Tch = 25°C

[3] Measurement conditions: VDD = 1100V, ID = 250A, Tch = 150°C

[4] As of August 2023, Toshiba compared the switching losses of the 2300V Si module and the new SiC MOSFET chip MG250YD2YMS3 (performance values for the 2300V Si module were estimated by Toshiba based on papers published by March 2023 or earlier).

* Applications:

· Industrial Equipment

· Renewable Energy Generation Systems (e.g., photovoltaic systems)

· Energy Storage Systems

· Electric Motor Control Equipment for Industrial Applications

· High-Frequency DC-DC Converters and Equipment

* Key Features:

· Low Drain-Source On-State Voltage (VDS(on)sense): VDS(on)sense = 0.7V (typical) (ID = 250A, VGS = +20V, Tch = 25°C)

· Low Turn-On Losses: Eon = 14mJ (typical) (VDD = 1100V, ID = 250A, Tch = 150°C)

· Low Turn-Off Losses: Eoff = 11mJ (typical) (VDD = 1100V, ID = 250A, Tch = 150°C)

· Low Parasitic Inductance: LsPN = 12nH (typical)

* Primary Specifications: 

(Unless otherwise specified, Ta = 25°C) Device Model: MG250YD2YMS3 Toshiba Package Name: 2-153A1A Absolute Maximum Ratings:

· Drain-Source Voltage (VDSS) (V): 2200

· Gate-Source Voltage (VGSS) (V): +25 / -10

· Drain Current (DC) (A): 250

· Drain Current (Pulse) (A): 500

· Junction Temperature (Tch) (°C): 150

· Isolation Voltage (Visol) (Vrms): 4000

* Electrical Characteristics:

· Drain-Source On-State Voltage (VDS(on)sense) (V): Typical Value: 0.7 (ID = 250A, VGS = +20V, Tch = 25°C)

· Source-Drain On-State Voltage (VSD(on)sense) (V): Typical Value: 0.7 (IS = 250A, VGS = +20V, Tch = 25°C)

· Source-Drain Off-State Voltage (VSD(off)sense) (V): Typical Value: 1.6 (IS = 250A, VGS = -6V, Tch = 25°C)

· Turn-On Loss (Eon) (mJ): Typical Value: 14 (VDD = 1100V, ID = 250A, Tch = 150°C)

· Turn-Off Loss (Eoff) (mJ): Typical Value: 11

Main Specifications

(Tc=25°C unless otherwise specified)