Samsung 32GB DDR5 DRAM: Next-Gen 12nm Memory

On September 1, 2023, Samsung made a significant announcement in the field of electronic components. They introduced their cutting-edge 12-nanometer (nm) process technology, which has enabled the development of their largest-capacity 32GB DDR5 DRAM (DDR5 DRAM: Fifth Generation Double Data Rate Synchronous Dynamic Random-Access Memory). This milestone comes after Samsung's successful production of 12nm 16GB DDR5 DRAM in May 2023, solidifying their leadership in the next-generation DRAM memory technology sector and marking the dawn of a new era in high-capacity memory solutions.

SangJoon Hwang, Executive Vice President of Samsung Electronics' Memory Development Division, expressed, "Building upon the foundation of our latest 12nm 32GB memory technology, we are poised to create solutions capable of achieving 1TB memory modules. This advancement is poised to meet the ever-growing demands of the Artificial Intelligence and Big Data era for high-capacity DRAM memory. Leveraging our distinctive process and design technologies, we will continue to innovate in memory solutions and surmount the technical barriers in this field."

Over the past four decades, since Samsung's pioneering development of a 64-kilobit (Kb) memory in 1983, they have astonishingly increased memory capacity by a factor of 500,000. The latest 32GB DDR5 memory chips, leveraging state-of-the-art process technology, exhibit enhanced integration density and optimized packaging design. Compared to DDR5 16GB chips, Samsung's single-chip DRAM memory chips double the memory capacity within the same physical dimensions.

Notably, prior to this development, DDR5 128GB memory modules created using 16GB memory chips necessitated the utilization of Through-Silicon Via (TSV) technology. However, with the introduction of the latest 32GB memory chips, Samsung can now produce 128GB memory modules without the reliance on TSV technology. This breakthrough innovation reduces power consumption by approximately 10% in comparison to 128GB memory modules employing 16GB memory packaging. This advancement positions the product as an ideal solution for energy-efficient enterprises, including data centers.

Building upon the foundation of their 12nm 32GB DDR5 DRAM, Samsung has ambitious plans to expand their portfolio of high-capacity memory products to meet the growing demands of high-performance computing and the broader IT industry. By providing 12nm 32GB memory solutions to data centers and customers embracing applications like Artificial Intelligence and next-generation computing, Samsung aims to strengthen its leading position in the next-generation memory market. This product is set to play a pivotal role in Samsung's long-term partnerships with key industry collaborators.

The all-new 12nm 32GB DDR5 DRAM is scheduled to commence mass production by year-end, offering promising opportunities for businesses and industries seeking advanced memory solutions.