Vishay Unveils Revolutionary 650V E-Series MOSFET: SiHP054N65E

Vishay Intertechnology, Inc. (NYSE: VSH) is pleased to announce the launch of its latest fourth-generation 650V E-Series Power MOSFET - SiHP054N65E. This innovative MOSFET is designed to significantly enhance efficiency and power density across applications within the communication, industrial, and computing sectors.

SiHP054N65E offers a remarkable improvement, boasting a 48.2% reduction in on-state resistance compared to its predecessor. Furthermore, it achieves a noteworthy 59% decrease in the product of on-state resistance and gate charge, a critical performance metric known as the Figure of Merit (FOM), vital for 650V MOSFETs utilized in power conversion applications.

Vishay's extensive portfolio of MOSFET technology serves as a cornerstone for various advanced high-tech devices requiring voltage conversion from high to low. The introduction of SiHP054N65E, along with other fourth-generation 600V E-Series devices, equips Vishay to address the early-stage requirements of power system architecture, enhancing efficiency and power density. These applications encompass power factor correction (PFC), as well as downstream DC/DC converter brick power supplies, with typical use cases spanning servers, edge computing, data storage systems, uninterruptible power supplies (UPS), high-intensity discharge (HID) lamps, fluorescent ballasts, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.

SiHP054N65E harnesses Vishay's advanced high-efficiency E-Series superjunction technology, showcasing a typical on-state resistance of just 0.051 Ω at 10V gate drive. This advancement empowers the device to support power levels exceeding 2 kW while adhering to the requirements of the Open Compute Project's Open Rack V3 (ORV3) standard. Additionally, this MOSFET features an ultra-low gate charge of 72nC, resulting in an FOM of 3.67 Ω*nC, representing a remarkable 1.1% reduction when compared to similar competitive MOSFETs. These parameters underscore the device's ability to minimize conduction and switching losses, leading to tangible energy savings and enhanced efficiency. SiHP054N65E is engineered to meet specific criteria for server power supplies, including the titanium efficiency effect, and is capable of achieving a remarkable peak efficiency of 96% in communication power supplies.

Moreover, this recently unveiled MOSFET showcases impressive performance metrics. It boasts typical values for effective output capacitance (Co(er)) and total gate charge (Co(tr)) of only 115 pF and 772 pF, respectively. These characteristics greatly improve performance in hard-switching topologies such as power factor correction (PFC), half-bridge configurations, and double-switch forward designs. The product of on-state resistance and Co(tr) stands at a competitive 5.87 W*pF, placing it at the forefront of industry standards.

SiHP054N65E is conveniently packaged in a TO-220AB form factor, offering enhanced dv/dt ruggedness while maintaining compliance with RoHS and Vishay's green standards. It is halogen-free, capable of withstanding voltage transients during avalanche mode, and guarantees a 100% pass rate in UIS testing.