Samsung's Memory Tech Day: Unleashing HBM3E Innovation

On October 21st, Samsung Electronics held its much-anticipated "Memory Tech Day" event, during which it unveiled the cutting-edge HBM3E high-bandwidth memory chip, known as "Shinebolt."

In response to the ongoing advancements in cloud systems, the need for high-performance memory has become increasingly crucial for optimizing computational resources and processing vast data volumes with enhanced bandwidth capabilities. Samsung's latest innovation, the HBM3E Shinebolt, stands out with an impressive individual pin speed of up to 9.8Gbps and a remarkable total bandwidth of up to 1.2TB/s.

Samsung's commitment to pushing the boundaries of memory technology is evident in its meticulous optimization of Non-Conductive Film (NCF) technology. By eliminating gaps between chip layers and maximizing thermal conductivity, the company has achieved higher stacking levels and improved heat dissipation. Samsung is now in full-scale production of 8-layer and 12-layer HBM3 products, with Shinebolt samples readily available to its customers.

Leveraging its fourth-generation 10nm (14nm) EUV lithography process, Samsung is manufacturing HBM3 chips with an impressive 24GB capacity. Furthermore, the 8-layer and 12-layer stacking on HBM3E offers a remarkable 36GB capacity, surpassing HBM3 by 50%.

It's noteworthy that other prominent players in the industry, including SK Hynix and Micron, have also announced the release of HBM3E chips, all of which are capable of delivering bandwidth exceeding 1TB/s. This significant advancement marks a momentous stride in high-performance memory technology, further empowering industries and applications worldwide.