Rohm's Remarkable Dual MOSFET Marvel

Rohm Semiconductor has recently introduced a cutting-edge dual MOSFET device that incorporates two 100V chips within a single package. This strategic move by Rohm Semiconductor reflects its commitment to staying in step with market dynamics through continual innovation and product enhancement.

In response to the evolving power systems of contemporary communication base stations and industrial equipment, which are increasingly transitioning to 48V, this new dual MOSFET device offers exceptional 100V voltage tolerance, effectively mitigating voltage fluctuations. Furthermore, its application in the realm of fan motors, which also operate on 48V power, adds significant value to this technology.

However, it is worth noting that augmenting breakdown voltage can result in increased on-resistance (RDS(on), leading to diminished efficiency. Striking the right balance between low RDS(on) and high breakdown voltage represents a considerable challenge. Furthermore, the growing favorability of dual-channel MOSFETs integrating two chips into a single package is evident in the market, as this approach conserves space, in contrast to the use of multiple individual driver MOSFETs.

Addressing these issues and catering to market demands, Rohm Semiconductor has introduced two distinct series: HP8KEx/HT8KEx (Nch+Nch) and HP8MEx (Nch+Pch). Leveraging state-of-the-art manufacturing techniques and combining N-channel and P-channel MOSFET chips, both series achieve industry-leading low RDS(on). They incorporate a novel backside heat dissipation package that boasts excellent thermal properties.

Compared to conventional dual-channel MOSFETs, these new offerings significantly reduce RDS(on) by as much as 56% (HSOP8 at 19.6 mΩ and HSMT8 Nch+Nch at 57.0 mΩ), leading to a marked reduction in power consumption. Furthermore, the consolidation of two chips within a single package results in substantial space savings. For instance, substituting two TO-252 single-chip MOSFETs with a solitary HSOP8 configuration decreases the physical footprint by 77%.

Rohm Semiconductor's innovative dual MOSFET device not only delivers exceptional performance but also effectively addresses real-world application challenges. This breakthrough has significant implications for professionals seeking advanced semiconductor solutions in tune with the latest industry trends.