Resonac Sets Up Semiconductor R&D Hub in Silicon Valley

Resonac, a prominent Japanese semiconductor materials manufacturer, has unveiled plans to establish a cutting-edge semiconductor packaging and materials research center in Silicon Valley, USA. This state-of-the-art facility, currently in the process of acquiring advanced equipment, is slated to commence operations in 2025, boasting a pristine cleanroom and cutting-edge equipment.

In a significant development, Resonac proudly announced its role as Japan's inaugural strategic materials manufacturing partner, joining forces with the Texas Electronic Institute (TIE), a distinguished semiconductor manufacturing alliance based in Texas, USA. Notable members of this alliance include industry leaders such as AMD, Micron Technology, Intel, and Applied Materials.

Formerly known as Showa Denko, Resonac specializes in the production of advanced packaging materials, with a particular focus on excelling in third-generation semiconductor materials like SiC and GaN. The company embarked on SiC epitaxial technology research in 2010, unveiling the second-generation SiC epitaxial technology in 2019, featuring defects below 0.1 per square centimeter. In recent years, Resonac has accelerated its research endeavors, achieving noteworthy technological advancements. From the initiation of mass production of second-generation SiC epitaxial wafers in March 2022 to the introduction of samples of third-generation SiC epitaxial wafers in March 2023, Resonac has demonstrated remarkable progress.

Resonac's SiC materials business primarily provides substrates and epitaxial products, with the ultimate components being manufactured by customers. Collaborations with semiconductor industry giants, including Infineon and Rohm, are marked by increasing synergy. In a notable development, Infineon has expanded its partnership with Resonac, anticipating a substantial share of SiC material supply from Resonac over the next decade. Furthermore, Infineon will contribute to Resonac's growth by sharing intellectual property related to SiC material technology, supporting enhancements in SiC epitaxial wafer technology and product quality.