Nexperia Unveils Its First SiC MOSFET
In a recent announcement, Nexperia, a globally recognized leader in the production of foundational semiconductor components, unveiled its inaugural Silicon Carbide (SiC) MOSFET. This marks a significant advancement in Nexperia's high-capacity product line, introducing two discrete devices with 3-pin TO-247 packaging and a 1200 V voltage rating. Named NSF040120L3A0 and NSF080120L3A0, these devices feature RDS(on) values of 40 mΩ and 80 mΩ, respectively. The launch represents Nexperia's strategic move into silicon carbide technology, delivering enhanced SiC MOSFET solutions for applications such as electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), solar inverters, and energy storage systems (ESS).
“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years”.
“Together with Nexperia, we're thrilled to introduce these new SiC MOSFETs as the first product of our partnership”, says Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric. “Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”
Crucially, Nexperia's SiC MOSFETs exhibit industry-leading temperature stability, with the nominal value of RDS(on) increasing by a mere 38% within the operating temperature range of 25°C to 175°C. Additional advantages, such as low gate-source charge (QG) and balanced gate-source charge, position Nexperia SiC MOSFETs as leaders in gate drive losses and robustness against disturbances.
Looking forward, Nexperia plans to introduce automotive-grade MOSFETs, demonstrating a commitment to ongoing innovation and addressing evolving market needs. Both NSF040120L3A0 and NSF080120L3A0 are currently in mass production, offering customers efficient and reliable SiC MOSFET solutions. This product launch not only signifies technological innovation but also serves as a testament to successful industry collaboration.
