Taiwan Semiconductor Manufacturing Company (TSMC) has announced significant advancements in the development of its 1.4nm manufacturing technology during the "Future of Logic" session at the IEEE International Electron Devices Meeting (IEDM). TSMC underscores that the commencement of mass production using its cutting-edge 2nm manufacturing process is anticipated by 2025.
As per the insights shared by Dylan Patel of SemiAnalysis, TSMC has officially designated its 1.4nm production node as A14. The company has not disclosed specific details regarding the timeline or specifications for the mass production of A14. However, considering the N2 plan scheduled for the end of 2025 and the N2P plan set for the end of 2026, projections suggest a plausible launch window for A14 between 2027 and 2028.
The choice between adopting the vertical stacking of Complementary Field-Effect Transistors (CEFT) structure or maintaining the 2nm process with Gate-All-Around Field-Effect Transistors (GAAFET) remains an open question for TSMC.
An area of interest is whether TSMC will incorporate High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUV) machines for its A14 process technology within the 2027-2028 timeframe. Considering that industry players such as Intel are poised to embrace and refine next-generation EUV lithography machines featuring a numerical aperture of 0.55 by then, semiconductor foundries may find them more accessible. However, the adoption of High NA EUV lithography introduces additional challenges due to the halving of mask dimensions, presenting extra considerations for chip designers and manufacturers.