SK Hynix Launches HBM4 Development in 2024

In recent announcements, SK Hynix, a prominent player in the storage chip industry, has officially confirmed its commencement of the development of the next-generation HBM4 as part of its 2024 storage product line. This strategic move is poised to fortify applications in data centers and artificial intelligence products. Notably, Samsung and Micron had earlier disclosed their respective ongoing developments in HBM4 during the fourth quarter of 2023, with projected releases scheduled for 2025 and 2026.

HBM4 represents the sixth generation in the High Bandwidth Memory (HBM) series, following five previous iterations and the extended version, HBM3E. SK Hynix disclosed that HBM3E is slated for mass production in 2024. The initiation of HBM4 development underscores a pivotal advancement in the ongoing evolution of HBM products.

Reports indicate significant design changes for HBM4, with the adoption of a 2048-bit interface for memory stacking. This marks a notable departure from the consistent use of a 1024-bit interface since 2015, representing a substantial paradigm shift in HBM memory technology. Should HBM4 maintain the current pin speed, it implies a substantial bandwidth increase from the existing 1.15TB/s of HBM3E to an impressive 2.3TB/s.

Furthermore, the anticipated evolution of HBM4 involves changes in the number of stacked layers. Beyond the initial 12-layer vertical stacking, products featuring a 16-layer vertical stack are expected to emerge by 2027. Additionally, HBM is progressing towards a more customized direction, with installations positioned not only beside the System on Chip (SoC) main chip but also some strategically stacking above the main chip. This architectural shift is expected to provide substantial support and enhancement.