SK Hynix: Accelerate Production of HBM4E Memory

According to the South Korea Media, SK Hynix has recently announced its accelerated timeline for the mass production of the seventh-generation High Bandwidth Memory, HBM4E. Originally slated for 2027, production is now scheduled to commence a year earlier, in 2026. This update was shared by Kim Kwi-wook, the head of SK Hynix's Advanced HBM Technology Team, during the IEEE 2024 International Storage Symposium held in Seoul.

Traditionally, advancements in HBM technology have occurred biennially. However, with the introduction of the fifth-generation product, HBM3E, this cycle has been compressed to an annual basis.

Anticipated enhancements for HBM4E include an increase in stacking layers to a range of 16 to 20 layers. Previously, SK Hynix had outlined plans for 16-layer HBM4 production by 2026. Additionally, the company hinted at the potential adoption of "hybrid bonding" technology, which could facilitate even higher stacking layers, beginning with HBM4.

Hybrid bonding technology offers the promise of increased DRAM stacking by eliminating inter-chip bumps. SK Hynix has expressed its intention to leverage Advanced MR-MUF (Advanced Mass Reflow Underfill) technology until the HBM4 phase.

However, Kim Kwi-wook noted challenges with hybrid bonding technology integration, citing low yields thus far. He emphasized the potential need to explore alternative processes for products requiring over 20 layers, owing to thickness constraints.

Industry observers speculate that SK Hynix may integrate 10nm process technology for the first time in its sixth-generation (1c) DRAM, which could significantly boost storage capacity for HBM4E.