Samsung 5th Gen 1b DRAM Yield Below Target

As reported by ZDNet Korea, Samsung is facing challenges in achieving the desired yield for its fifth-generation 10nm-class (1b) process DRAM, falling short of the industry standard of 80% to 90%. To address this, Samsung has recently formed a specialized task force.

The company had previously announced the commencement of mass production for 16Gb DDR5 memory using this advanced process in May 2023, followed by the successful development of 32Gb DDR5 memory in September 2023. This technological advancement allows Samsung to manufacture high-density DDR5 RDIMM memory modules of up to 128GB without relying on TSV (Through-Silicon Via) technology.

Compared to memory utilizing TSV technology, these modules offer a 10% reduction in power consumption and significant cost savings in manufacturing. Consequently, Samsung regards the 32Gb DDR5 memory chips produced through this process as its flagship product for the future. A dedicated task force has been established to enhance yield and ensure competitiveness in the market.

Samsung Electronics has also announced plans for substantial expansion in the production capacity of fifth-generation 10nm-class (1b) process DRAM. The Hwaseong 15 and Pyeongtaek P2 fabs are designated as primary production facilities for this product line. While the Pyeongtaek P2 fab currently focuses on the third-generation 10nm-class (1z) process, it will undergo upgrades to accommodate the latest technology.

Samsung's production capacity for fifth-generation 10nm-class (1b) process DRAM is slated to increase from 40,000 wafers per month to 70,000 wafers per month by the third quarter of 2024, and further to 100,000 wafers per month by the fourth quarter. By early 2025, Samsung aims to achieve a production capacity of 200,000 wafers per month to meet growing market demand.