Samsung Invests in 1c nm DRAM at Pyeongtaek P4

As the demand for storage solutions rises, the memory industry continues its robust recovery. Samsung has announced a strategic investment plan for a cutting-edge 1c-nanometer DRAM production line at its Pyeongtaek P4 facility, aiming to commence mass production by June 2025.

The Pyeongtaek P4 site is a major semiconductor manufacturing hub, organized into several development phases. Initially, the facility focused on NAND Flash memory, with plans for future phases to include logic foundry services and DRAM production. Although DRAM equipment has been installed for Phase 1, the construction for Phase 2 has been postponed.

The 1c-nanometer DRAM represents the latest generation of 10-nanometer-class technology. Major manufacturers have yet to release 1c-nanometer DRAM products. Samsung is set to begin production of this advanced DRAM technology by the end of the year.

Looking forward, Samsung is considering incorporating 1c-nanometer DRAM into its upcoming HBM4 memory, expected in the second half of 2025. This initiative is designed to enhance the competitiveness of HBM4 and maintain Samsung's edge over rivals like SK Hynix.

Given the high wafer consumption required for HBM compared to traditional memory, Samsung's investment in the 1c-nanometer DRAM line at Pyeongtaek P4 is strategically aimed at preparing for the HBM4 launch and meeting future market demands.