TI Quadruples GaN Semiconductor Production Capacity
On October 24, 2024, Texas Instruments (TI), a leading American semiconductor manufacturer, announced the commencement of GaN (Gallium Nitride) power semiconductor production at its Aizuwakamatsu facility in Japan. This expansion significantly enhances TI's GaN manufacturing capacity, quadrupling its internal production capabilities when combined with the existing GaN facility in Dallas, Texas.
Mohammad Yunus, Senior Vice President of Technology and Manufacturing at TI, remarked, "With over a decade of expertise in GaN chip design and manufacturing, we have successfully validated our 200mm (8-inch) GaN technology, which is currently the most scalable and cost-effective method for GaN production. This milestone enables us to manufacture a greater volume of GaN chips in-house, with a target of achieving over 95% internal manufacturing capacity by 2030. Additionally, we will leverage multiple TI facilities to ensure a reliable supply of our extensive GaN power and energy-efficient semiconductor product portfolio."
GaN is a superior semiconductor material that can replace silicon, offering energy savings, higher switching speeds, and reduced size and weight of power solutions, along with lower overall system costs and enhanced performance in high-temperature and high-pressure environments. GaN chips deliver increased power density, making them ideal for applications such as power adapters for laptops and smartphones, as well as smaller, energy-efficient motors for heating, cooling systems, and household appliances.
Currently, Texas Instruments boasts the broadest portfolio of integrated GaN power semiconductor products, catering to a range of voltages and enabling the development of energy-efficient, reliable, and high-density electronic products.
Kannan Soundarapandian, Vice President of High Voltage Power at TI, stated, "GaN technology empowers Texas Instruments to deliver more power in compact spaces, which is a key market demand driving innovation for many of our customers. As designers of systems like server power supplies, solar energy solutions, and AC/DC adapters face the challenges of reducing power consumption and enhancing energy efficiency, they increasingly rely on TI's high-performance GaN chips. Our integrated GaN power stage product lineup allows customers to achieve higher power density, enhanced usability, and lower system costs."
Moreover, TI's GaN chips are engineered for safety in high-voltage systems, supported by proprietary silicon-based GaN technology, over 80 million hours of reliability testing, and integrated protective features.
Texas Instruments has invested in state-of-the-art equipment for GaN chip manufacturing, enabling improved product performance and manufacturing process efficiency while maintaining cost advantages. The advanced tools utilized in the expanded GaN production allow for the creation of smaller chips, facilitating higher power outputs. This design innovation reduces the consumption of water, energy, and raw materials in the manufacturing process, while also providing environmental benefits for end products that utilize GaN chips.
The enhanced GaN manufacturing capabilities at TI further enable the company to scale its GaN chips to higher voltages, starting from 900V and progressively increasing over time. This scalability enhances power efficiency and size innovation for applications in robotics, renewable energy, and server power supplies.
TI's investments also include a pilot project successfully developed earlier this year for GaN manufacturing processes on 300mm (12-inch) wafers. The company's expanded GaN manufacturing techniques are fully transferable to 300mm technology, allowing for scalable production based on customer demand and potential future transitions to larger wafer sizes.
Additionally, Texas Instruments is committed to utilizing 100% renewable power in its U.S. operations by 2027 and globally by 2030, reinforcing its dedication to sustainability in semiconductor manufacturing.
