SK hynix: Successfully developed the world's first NAND flash memory with the highest number of layers in the industry, and plans to mass-produce it in 2023

On August 3, SK hynix announced that it has successfully developed the world's first 238-layer NAND flash memory with the highest number of layers in the industry. SK hynix has sent samples of 238-layer 512Gb TLC (Triple Level Cell)* 4D NAND flash memory to customers, and plans to start mass production in the first half of 2023. The company said: "Since the completion of the research and development of 176-layer NAND flash memory in December 2020, SK hynix has successfully completed the research and development of a new generation of technology for the first time in the world after only one year and seven months. The 238-layer NAND flash memory has reached the highest level in the industry. The smallest area in the world is achieved while stacking the number of layers, which is even more significant."