SK Hynix Boosts 1c DRAM with Six-Layer EUV for High-NA EUV

According to South Korean media outlet ZDNet, SK Hynix has achieved a major milestone in DRAM manufacturing, becoming the first to adopt six layers of EUV lithography in its 1c DRAM process. This advancement is set to boost the performance and yield of DDR5 and HBM products, further cementing SK Hynix's leadership in the memory sector.

While EUV lithography has already been used in 10nm-class DRAM, it was typically applied to only a few key layers, with most layers still relying on DUV. SK Hynix's jump to six EUV layers in 1c DRAM marks a significant step forward—enabling higher density memory cells, faster read/write speeds, and lower power consumption for next-generation DDR5 and high-capacity HBM stacks. Early reports suggest that the company has already achieved yields of 80–90% for this process.

Although 1c DRAM hasn't yet appeared in mainstream consumer memory, SK Hynix is actively exploring new applications, including larger-capacity DDR5 and HBM solutions. The company also plans to expand EUV usage in upcoming 1d and 0a DRAM generations, paving the way for even more advanced High-NA EUV adoption in the future.