In today's world, where artificial intelligence and mobile devices are deeply intertwined, the next-generation memory technology is quietly reshaping our digital experiences. In June 2025, Micron Technology announced the shipment of the world's first LPDDR5X memory certified samples built on the 1γ (1-gamma) process node. This breakthrough technology pushes memory speeds up to 10.7 Gbps while reducing power consumption by up to 20%. As the first mobile memory solution worldwide to use extreme ultraviolet (EUV) lithography, it not only opens new possibilities for accelerating AI applications in flagship smartphones but also draws widespread attention in the memory market. This article provides a comprehensive introduction to LPDDR5, including its definition, structure, performance compared with LPDDR4, market development, and more.
Catalog
LPDDR5 stands for the fifth generation of Low Power Double Data Rate memory, specifically designed for mobile devices. It is a standard defined by JEDEC (the Solid State Technology Association) to meet the demand for high-performance, low-power memory in smartphones, tablets, and other portable devices. LPDDR5X is an enhanced version of LPDDR5, offering higher speeds and lower power consumption. The standard was released in 2021, initially reaching speeds of 8,533 Mb/s. Leading memory manufacturers, however, did not stop there—Micron, Samsung, and SK Hynix further pushed LPDDR5X data transfer rates to 9,600 Mb/s in 2023.
The internal architecture of LPDDR5 includes three voltage domains: VDD1, VDD2, and VDDQ. VDD2 is further divided into VDD2H and VDD2L. Compared with LPDDR4, LPDDR5 reduces VDD2H from 1.1V to 1.05V and VDDQ from 0.6V to 0.5V, directly contributing to lower power consumption.
LPDDR5 supports multi-Bank Group mode, which adds more parallel data paths. This design is similar to upgrading from a single-lane to a multi-lane highway, significantly increasing data transfer bandwidth.
LPDDR5 also introduces two important new commands: Data-Copy and Write-X. The Data-Copy command allows LPDDR5 to replicate data from one I/O pin to others, improving data transfer efficiency. The Write-X command enables writing all 1s or all 0s to a specific address without sending the data from the SoC to LPDDR5, effectively reducing overall system power consumption.
Additionally, LPDDR5 introduces link-level ECC (Error Correction Code), improving data reliability and integrity—particularly important for safety-critical applications like automotive electronics.
The performance differences between LPDDR5 and LPDDR4 mainly fall into four areas:
· Data Transfer Rate: LPDDR5 achieves a maximum I/O transfer rate of 6,400 MT/s, while LPDDR4 reaches only 4,267 MT/s—a significant improvement.
· Power Efficiency: LPDDR5 supports lower operating voltages. Idle current is reduced by 40% compared to LPDDR4X, greatly cutting power consumption. Overall, user battery life improves by about 10%; in gaming, power savings reach 20%; and in voice or video apps like WeChat, savings are around 10%.
· Device Density: LPDDR5 can reach capacities up to 32 Gb, while LPDDR4 maxes out at 16 Gb.
· Architectural Advantage: LPDDR5's multi-Bank Group mode adds more parallel data paths, further enhancing data transfer bandwidth.
LPDDR5 memory plays a key role across various applications:
Smartphones: LPDDR5 is now standard in flagship devices. The Xiaomi 10 was the first smartphone to use LPDDR5 memory, with 6GB, 8GB, and 12GB versions provided by Micron, delivering data transfer rates of 5.5Gbps and 6.4Gbps.
Automotive Electronics: LPDDR5 is crucial in automotive safety applications. Micron offers LPDDR5 memory designed for automotive use, meeting ASIL D requirements—the highest safety standard in the automotive industry. These memory solutions enhance data-intensive systems like advanced driver assistance, automatic braking, and driving alerts.
AI Applications: LPDDR5 provides the speed and capacity needed for AI engines integrated directly into mobile processors. These processors rely on LPDDR5's fast data transfer rates to support machine learning workloads.
The memory market showed steady growth in 2025. Reports indicate that Samsung recently informed major clients that DRAM prices for LPDDR4X and LPDDR5/5X are expected to rise by 15%-30% in Q4.
This price increase reflects strong ongoing demand, especially as AI usage expands rapidly, with applications penetrating more scenarios.
In June 2025, Micron announced it had begun shipping the world's first LPDDR5X memory certified samples built on the 1γ process node. The product delivers industry-leading speeds of up to 10.7 Gbps while reducing power consumption by up to 20%.
Micron's 1γ-node LPDDR5X significantly improves mobile AI responsiveness: when querying location-based restaurant recommendations, response speed increases by 30%; when using navigation to translate English voice queries into Spanish text, response speed improves by more than 50%.
Looking ahead, as AI applications demand more high-performance, low-power computing, devices such as data center servers, smart cars, and AI PCs are likely to increasingly adopt LPDDR5X memory, benefiting from its combination of high performance and energy efficiency.
With the rapid development of AI and 5G, demand for LPDDR5 and its derivative LPDDR5X will continue to grow. Leading memory manufacturers like Micron and Samsung are already advancing process technologies and higher-performance products. LPDDR5 technology is gradually expanding from flagship mobile devices to mid- and high-end models and is beginning to show value in automotive electronics, AIoT, and other fields. It represents the current peak of mobile memory technology and lays a solid foundation for the future of smart devices.