SK Hynix to Use TSMC 3nm Process for HBM4E Logic Dies

South Korean media reports indicate that SK Hynix is planning to adopt a 3-nanometer process from Taiwan Semiconductor Manufacturing Company for the logic die used in its next-generation high-bandwidth memory, HBM4E. The stacked DRAM core dies are expected to be produced using the company's advanced 1c DRAM process technology.

Industry analysts note that in some early performance benchmarks for HBM4, Samsung Electronics appeared to hold a slight technical advantage. By selecting TSMC's 3 nm node for the HBM4E logic die, SK Hynix aims to strengthen performance leadership in the upcoming generation of high-bandwidth memory.

According to current plans, the HBM4 products that SK Hynix intends to deliver to NVIDIA in 2026 will integrate a logic die manufactured using TSMC's 12 nm process alongside DRAM core dies produced on the 1b DRAM node. In contrast, Samsung's HBM4 architecture is based on its in-house 4 nm process for the logic die combined with 1c DRAM core dies. Although SK Hynix currently maintains a leading position in the HBM market by shipment volume, some observers believe Samsung's process technology may provide a slight performance edge. Samsung has previously stated that its HBM4 products benefit from more advanced manufacturing technology and has already achieved the industry's first mass production.

As the HBM4E market begins to emerge, demand for customized HBM solutions is expected to increase gradually. The logic die may be produced using different foundry nodes depending on design requirements, but SK Hynix is likely to prioritize a solution centered on TSMC's 3 nm technology.

Meanwhile, next-generation AI processors are expected to accelerate adoption of HBM4E. The flagship version of NVIDIA Vera Rubin Ultra is anticipated to integrate HBM4E memory. In addition, Advanced Micro Devices and Google have both indicated plans to deploy HBM4E in upcoming AI chip platforms. Recently, Samsung also unveiled its HBM4E technology at NVIDIA GTC 2026, highlighting its determination to compete aggressively in the next phase of the high-bandwidth memory market.

Against this backdrop, SK Hynix's decision to adopt TSMC's 3 nm process for HBM4E logic dies is widely viewed as a signal that competition in the advanced HBM ecosystem is entering a new stage.