
According to industry sources, Samsung Electronics is steadily advancing its sub-3nm process roadmap, with yields for its 2nm Gate-All-Around (GAA) technology reportedly reaching around 60%—a milestone that significantly strengthens confidence in its next-generation manufacturing capabilities.
The company is currently conducting pilot production of advanced lithography technologies at its fab in Taylor, Texas. Originally designed for 4nm wafer production, the facility has been upgraded into a 2nm process hub, positioning Samsung more competitively against TSMC, which has taken a more cautious approach to deploying its most advanced 2nm technology in the U.S. market.
Parts of the Taylor facility have already received a Temporary Certificate of Occupancy (TCO), enabling engineers to move in and accelerate operational readiness. Trial production reportedly began in March, with more than 7,000 personnel currently on-site. To support the ramp-up, ASML has deployed technical teams to assist with the installation and optimization of extreme ultraviolet (EUV) lithography systems, ensuring stable operation of critical equipment.
If pilot runs proceed as planned, the Taylor fab is expected to begin operations in 2026, with full-scale mass production targeted for 2027. By transitioning to 2nm GAA architecture, Samsung aims to deliver improved performance and power efficiency compared to conventional 4nm nodes. The technology is expected to be used in future processors such as the Exynos 2600 and has reportedly already secured interest from major customers including Tesla.
In parallel, Samsung has also won chip orders from U.S.-based fabless companies and cloud service providers, further strengthening its footprint in the North American market. With capacity constraints affecting 3nm supply at TSMC, Samsung is emerging as an alternative for customers seeking advanced-node production. The company is expected to focus on yield improvements to reduce wafer costs, while potentially leveraging competitive pricing strategies to expand its market share in leading-edge semiconductors.