Samsung 8nm MRAM Ready, 5nm Targeted for 2027

According to South Korean media Seoul Economic Daily, citing industry sources, Samsung Electronics has successfully developed magnetic random-access memory (MRAM) based on an 8-nanometer process node, achieving mass-production-level yields. This milestone represents a major advancement in MRAM technology and strengthens Samsung’s position in next-generation memory solutions, with plans to further scale to 5nm MRAM production by 2027.

Test results show significant performance improvements compared with current mainstream 14nm MRAM. Samsung’s 8nm MRAM delivers a 62.5% increase in write speed, while achieving a storage density of 19.94Mb per square millimeter—an 11.5% improvement over the 14nm generation. In addition, the technology reaches a figure of merit (FoM) score of 4,146, representing a 52.9% overall performance gain. These results were first disclosed at the ISSCC 2026 conference and are recognized as the first verified manufacturing and performance demonstration of MRAM at the 8nm process scale.

Samsung has steadily advanced its MRAM roadmap, starting from the first commercial 28nm MRAM production in 2018, progressing to 14nm in 2024, and now targeting 8nm as a key upgrade phase for 2026. This breakthrough not only reinforces Samsung’s leadership in memory technologies but also enhances its competitive position in the rapidly growing AI semiconductor market.

At the same time, TSMC is also expected to complete preparations for 5nm MRAM production by 2027, signaling that competition between the world’s leading foundries is extending beyond logic chips into advanced MRAM technologies.

According to market research firm Global Market Insights, Samsung led the global MRAM market in 2025 with a 14.3% share, followed by TSMC at 11.9%. Together with other major players including Intel, Honeywell, and Infineon, the top five companies collectively account for approximately 52.7% of the emerging MRAM market, highlighting an increasingly concentrated competitive landscape in next-generation memory technology.