Samsung 1d DRAM Yield Issues Delay HBM5E Production

According to Korean media IT Chosun, Samsung Electronics has begun pilot production of its 1d DRAM (7th-generation 10nm-class process) in the first quarter of this year after receiving PRA (Production Readiness Approval). However, the company is reportedly facing setbacks as yields have failed to meet internal targets, potentially leading to an indefinite delay in the mass production roadmap for its next-generation HBM (High Bandwidth Memory) products.

Industry sources within Samsung indicate that the company has suspended any planned ramp-up of 1d DRAM mass production until yield stability is achieved, with no clear timeline for resumption. The internal focus has shifted toward a comprehensive review of the process roadmap in order to improve manufacturing yield and overall process stability. Senior management is also reassessing both yield performance and investment efficiency, concluding that current conditions are not yet suitable for commercialization or full-scale production.

The 1d DRAM node is expected to play a critical role in Samsung’s future HBM roadmap, particularly for its upcoming HBM5E generation. Prior generations, including 1c DRAM, are planned for use across multiple HBM products such as HBM4, HBM4E, and HBM5. From HBM5E onward, however, stable supply of 1d DRAM is considered essential. HBM4 is expected to launch later this year and is anticipated to be adopted in platforms such as NVIDIA’s Vera Rubin and AMD’s MI400 series, while HBM4E is projected for next-generation accelerators like Rubin Ultra and MI500. HBM5 and customized variants may also be integrated into future NVIDIA Feynman architecture-based AI systems.

The report further notes that due to the halted mass production plan, Samsung’s dedicated 1d DRAM task force of approximately 400 personnel is currently underutilized. While product validation approval has not yet been completed, key engineers are continuing limited R&D-focused collaboration and process analysis activities.

In contrast, SK Hynix has reportedly achieved yield breakthroughs in 1d DRAM development and is targeting completion of its development roadmap in the second half of 2026.

Meanwhile, Samsung is accelerating infrastructure investment, including the construction of a large-scale wafer fabrication facility in Onyang, South Korea. The site, comparable in size to four football fields, will support next-generation DRAM production, including HBM-related processes. It is designed to integrate key backend operations such as packaging, testing, logistics, and quality control to strengthen long-term high-volume manufacturing capability.