CXMT Mass Produces Fifth-Gen DRAM Platform

According to ChangXin Memory Technologies (CXMT), the company announced on September 20 that its fifth-generation DRAM technology platform, known as the G5 platform, has entered mass production at the World Manufacturing Conference. The company said the platform’s process technology has reached a level comparable to leading DRAM production nodes in the industry.

The G5 platform uses a four-patterning process to shrink the active-area half-pitch of its memory array to 11.95 nanometers, approaching the process dimensions of the world’s most advanced mass-produced memory platforms. Through process innovations and the adoption of new materials, CXMT has achieved a storage capacitor aspect ratio of 45:1.

The platform also incorporates a high-k metal gate (HKMG) process adapted for DRAM manufacturing, reducing the height of the core functional area to 6,762 nanometers. These process improvements are designed to increase memory density, with the number of dies produced per wafer rising by at least 50% compared with the previous-generation platform.

At the conference, CXMT also showcased two LPDDR5X mass-production products based on the G5 platform. Each device offers a capacity of 24Gb, representing a 50% increase over the previous-generation products of the same type.