Samsung: HBM to Reach Nearly 30% of DRAM Capacity

According to a Samsung Electronics executive, high-bandwidth memory (HBM) is expected to account for nearly 30% of total wafer production capacity at DRAM chipmakers next year, up from approximately 20% currently.

Kim Taewoo, Executive Vice President at Samsung Electronics, said HBM and conventional DRAM compete for the same wafer capacity. As a result, increasing HBM production could constrain the supply of standard DRAM.

HBM has become a critical component for artificial intelligence (AI) computing. It consists of vertically stacked memory chips that enable processors to access large amounts of data at high speeds, making it essential for AI accelerators and other high-performance computing applications.

The HBM market is currently dominated by South Korea's SK hynix and Samsung Electronics, along with U.S.-based Micron Technology. As demand for AI computing continues to grow, the increasing allocation of wafer capacity to HBM could have a significant impact on the broader DRAM market.