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BSM300D12P3E005

SILICON CARBIDE POWER MODULE. B
BSM300D12P3E005
ROHM Semiconductor
Quantity
Unit Price:$ 685.715
Total Price:$
QuantityUnit Price
1 +$ 685.715
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Product Details
Data Sheet
Guarantees
Shipping
Product AttributeAttribute Value
Series-
Product StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds14000pF @ 10V
Power - Max1260W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
Frequently Asked Questions
| Are the BSM300D12P3E005 price and stock displayed on the platform accurate?
BSM300D12P3E005 inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting the order, it is recommended to confirm the order with smbom salesperson or online customer service before payment.
| What if I don't get business or technical support in time?
Depending on the time difference between your location and our location, it may take several hours for us to reply, please be patient, Our technical engineers will help you with BSM300D12P3E005 pinout information, replacements, datasheets in pdf, programming tools, starter kits and more.
| What are the specific procedures for delivery?
Once payment has been confirmed and received you will see that the order status will change to "wait for delivery". We will then reach out to you and directly to arrange the delivery, requesting delivery address, contact details and updating you on the delivery timeline. Once delivery has been setup the status will be adjusted to "wait for the receipt".