ROHM will mass-produce next-generation power semiconductors in December, which can increase EV mileage

Japan's Kyodo News reported on the 25th that Rohm (ROHM) will start mass production of next-generation power semiconductors made of silicon carbide (SiC) in December.

It is reported that mass production will be carried out at the silicon carbide power semiconductor factory opened this year at the plant in Chikugo, Fukuoka Prefecture, Japan. In the future, ROHM will invest up to 220 billion yen in increasing production, and plans to increase the sales of silicon carbide in 2025 to 110 billion. JPY.

Rohm said that it has spent about 20 years promoting the research and development of (next-generation power semiconductors), which can improve the efficiency of electricity consumption when running the machine. If it is installed on a pure electric vehicle (EV), the cruising range can be increased by 10%.

On November 22, Mazda announced that the "e-Axle" under development will be equipped with silicon carbide parts provided by ROHM.