Samsung Electronics: The second-generation 3nm GAA process will be mass-produced as scheduled in 2024

On January 31, Samsung Electronics stated in the fourth quarter business performance conference call of last year: "Samsung's second-generation 3nm GAA process will be mass-produced as scheduled in 2024, and most mobile chips and HPC customers have expressed concern. Unlike the previous technology FinFET Compared with the process, it has the advantages of performance and power consumption efficiency, especially design flexibility."

Samsung previously announced that the second-generation 3nm GAA process will be mass-produced in 2024. Samsung said that the second-generation 3nm GAA process will be added to the MBCFET architecture, reducing the area of 3nm chips by 35%, improving performance by 30%, and reducing power consumption by 50%.

On June 30 last year, Samsung Electronics announced the mass production of 3nm chips, becoming the first manufacturer in the world to mass produce 3nm chips. However, Samsung’s first-generation 3nm GAA process has a low yield rate and did not receive many customer orders last year. In order to improve the 3nm yield rate, Samsung has cooperated with the US company Silicon Frontline Technology, hoping to help Samsung's fab improve the front-end process and chip performance through the other party's electrostatic discharge prevention technology.