Mitsubishi Electric to Double Investment in New SiC Wafer Factory to Meet Growing Demand for Electric Vehicles

Mitsubishi Electric recently announced that it plans to double its previously announced investment plan to around 260 billion yen by March 2026, mainly to construct a new wafer fabrication plant that will increase the production of silicon carbide (SiC) power semiconductors. As an electronic components distributor, this is an exciting development, as SiC power semiconductors are critical components used in various applications, including electric vehicles, renewable energy, and industrial equipment.

According to the plan, Mitsubishi Electric aims to meet the fast-growing demand for SiC power semiconductors driven by electric vehicles and expand into new application markets, such as low-energy loss, high-temperature operation, or high-speed switching. The additional investment of approximately 100 billion yen will be used to construct a new 8-inch SiC wafer plant and strengthen related production facilities. The new plant will have a self-owned facility in the Ishii area of Kumamoto prefecture and produce large-diameter 8-inch SiC wafers, with the introduction of a cleanroom that has the latest energy efficiency and high automation production efficiency.

Moreover, Mitsubishi Electric will also strengthen its 6-inch SiC wafer production facilities to meet the increasing demand in this area. Additionally, the company will invest about 10 billion yen in a new factory that integrates existing businesses scattered in the Fukuoka region for the assembly and inspection of power semiconductors. This integration of design, development, and production process verification will significantly enhance the company's development capabilities, making it easier to mass-produce products in response to market demand. The remaining 20 billion yen of new investment will be used for equipment improvement, environmental arrangements, and related operations.