SK Hynix Develops Record-Breaking 24GB HBM3 DRAM Using Advanced MR-MUF and TSV Technologies

On April 20, 2023, SK Hynix announced a breakthrough in memory technology by surpassing the performance limit of existing high-performance DRAM (Dynamic Random-Access Memory), the HBM3. They have successfully developed a new product that vertically stacks 12 DRAM chips, achieving a record-breaking capacity of 24 GB. The company is now conducting performance verification for this new product and is accepting orders from customers.

The SK Hynix team utilized advanced MR-MUF and TSV technologies to produce this innovative new product. The MR-MUF technology enhances production efficiency and stability, while the Through Silicon Via (TSV) technology allows them to stack 12 single DRAM chips that are 40% thinner than traditional chips, resulting in a height equivalent to the 16GB products. This HBM3 DRAM can transmit 163 full-HD movies per second with a maximum speed of 819GB/s.

As demand for high-end memory storage increases with the growth of the artificial intelligence chatbot industry, SK Hynix plans to release this new product in the second half of this year to meet market demands. The company aims to dominate the cutting-edge DRAM market in the era of artificial intelligence and is taking steps towards securing its lead in the field.

With its unprecedented capacity and speed, it presents an opportunity in electronic component industry to cater to the increasing demand for high-end memory storage devices.