Oriental Semiconductor Reports Strong Revenue and Profit Growth in 2022 While Expanding its MOSFET, TGBT, and SiC Device Market Shares

On April 20th, Oriental Semiconductor announced its annual performance report, stating that in 2022 the company achieved a revenue of 1.116 billion yuan, an increase of 42.74% year-on-year, and a net profit of 284 million yuan attributable to shareholders of listed companies, an increase of 93.57% year-on-year.

In 2022, Oriental Semiconductor continued to develop its businesses related to photovoltaic inverters, energy storage applications, and Uninterruptible Power Supplies (UPS). The company also made significant progress in industrial power supply, on-board chargers for new energy vehicles, DC charging piles, 5G communication and base station power supplies, industrial lighting, data center server power supplies, and other fields.

Regarding MOSFET, the company continued to expand its business in high-voltage super junction MOSFETs for photovoltaic inverters, energy storage applications, and UPS sectors. They successfully replaced IGBT and significantly improved system efficiency, resulting in a rapid increase in shipments. As a core device for high-performance power supplies, the super junction MOSFET maintains a high-speed growth rate in the field of data center server power supplies. The company's high-voltage super junction MOSFETs and medium-low voltage shielded gate MOSFETs continue to be shipped in bulk to customers, including A, Vitesco Technologies, and China Great Wall, while continuously increasing specifications and designs.

For TGBT, in 2022, the company continued to enrich its product specifications, and several products entered the mass production stage, achieving rapid growth in sales revenue. They also began supplying to several leading companies in new energy sectors such as photovoltaic inverters and energy storage, on-board chargers for new energy vehicles, and DC charging modules. Oriental Semiconductor's E-series high-speed TGBT products have been mass-applied to 60kHz frequency power systems, achieving domestic substitution in the field of high-speed IGBTs. The L-series TGBT achieved extremely low Vcesat, replacing foreign ultra-low Vcesat IGBT. In addition, the company's TGBT products are entering the certification stage in the field of new energy vehicle main drives. They also successfully developed the high-speed large current power device 600/650V Hybrid-FET based on TGBT technology and achieved a rapid increase in shipment volume, with its high performance recognized in the market.

Regarding the progress of SiC devices (including Si2C MOSFET), Oriental Semiconductor stated that it actively laid out the power device field based on the third-generation power semiconductor SiC material. During the reporting period, the company developed SiC diodes and invented Si2C MOSFET with independent intellectual property rights. Si2C MOSFET has passed customer verification and started small-scale supply, being applied in new energy vehicle on-board chargers, photovoltaic inverters and energy storage, high-efficiency communication power supplies, data center server high-efficiency power supplies, etc., achieving the replacement of SiC MOSFETs using traditional technology routes with broad market prospects.

Oriental Semiconductor also indicated that in 2022, the company actively promoted the technological iteration and upgrading of its main products, high-voltage super junction MOSFETs, medium-low voltage shielded gate MOSFETs, and TGBT product platforms, optimizing the product layout of the 8-inch and 12-inch chip foundries and achieving good results. Furthermore, the company will increase investment in forward-looking research and development such as third-generation and fourth-generation semiconductor materials, achieving breakthrough progress. As of the end of the reporting period, the company has a total of more than 2,196 product specifications, including 1,220 high-voltage super junction MOSFET products (including super silicon MOSFET), 816 medium-low voltage shielded gate MOSFET products, 160 TGBT products, and multiple SiC devices (including Si2C MOSFET).