Nexperia Unveils High-Performance 650V SiC Schottky Diode for Power Applications

Nexperia, a semiconductor manufacturer, has launched a new 650 V SiC Schottky diode designed specifically for power applications that require high performance, low losses, and high efficiency. The SC1065K is an industrial-grade device that aims to address the challenges of demanding high voltage and high current applications, including switch-mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, uninterruptible power supplies, and photovoltaic inverters.

According to Nexperia, the SC1065K boasts leading performance with temperature-independent capacitance switching and zero recovery behavior, high quality factor (QC x VF), and switching performance that is almost unaffected by changes in current and switching speed. The merged PiN Schottky (MPS) structure of the PSC1065K offers additional advantages such as robustness against surge current and no need for additional protection circuits. These features reduce system complexity, enabling hardware designers to achieve higher efficiency in smaller form factors for rugged high-power applications.

The SiC Schottky diode is packaged in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. Other package options include surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2), all with a true 2-pin configuration, enhancing reliability in high-voltage applications up to 175°C.

Nexperia also plans to add automotive-grade devices to its SiC diode series, with working voltages of 650 V and 1200 V and current ranges of 6-20 A. The new SiC diode is now available in samples and volume production.