Transphorm Launches SuperGaN FETs for Enhanced Performance

Transphorm, a leading provider of electronic components, has announced the release of six SuperGaN FETs in surface mount PQFN (Power Quad Flat No-Lead) packages. These six devices are offered as first design sources and can also serve as pin-to-pin replacements and/or auxiliary sources for e-mode GaN solutions.

The FETs are available in four different configurations: 72mΩ, 150mΩ, 240mΩ, and 480mΩ. The 72mΩ FET is designed for applications such as data communication, industrial systems, photovoltaic inverters, servo motors, computing systems, and general consumer applications. The 150mΩ, 240mΩ, and 480mΩ FETs are designed for power adapters, low-power SMPS (Switched-Mode Power Supplies), lighting, and low-power consumer applications.

For power systems that require additional thermal performance from the SuperGaN platform, Transphorm also offers SMD (Surface Mount Device) products with optimized packaging. According to Transphorm, the combination of d-mode configured low-voltage silicon MOSFETs with GaN HEMTs (High Electron Mobility Transistors) can be used in conjunction with standard off-the-shelf controllers and/or drivers.

Transphorm claims that replacing e-mode devices with SuperGaN d-mode FETs can result in higher performance, lower operating temperatures, and increased reliability by reducing conduction losses. An example can be found in a recent direct comparison, where a 50mΩ e-mode device was replaced by a 72mΩ SuperGaN FET in a 280W gaming laptop charger.

In this charger analysis, the SuperGaN FET operated within the output voltage range of the controller (eliminating the need for level shifting) and exhibited lower temperatures. The SuperGaN FET's temperature coefficient of resistance (TCR) is approximately 25% lower than that of the e-mode, which helps to reduce conduction losses. Additionally, the peripheral component count was reduced by 20%, indicating lower Bill of Materials (BOM) costs.

"Transphorm continues to deliver a robust portfolio of GaN devices, covering the widest power spectrum in the industry. By introducing these industry-standard packages, we strengthen our low-power strategy, following our recent announcement of SiP (System-in-Package) development in collaboration with Weltrend Semiconductors," said Philip Zuk, Senior Vice President of Business Development and Marketing at Transphorm. "Customers now have the flexibility to leverage the advantages of SuperGaN, whether through high-performance packaging, pin-to-pin e-mode compatible industrial standard packages, or system-level packaging."