SK Hynix Launches Advanced DDR5 DRAM for Intel's Data Center Certification

On May 30th, SK Hynix announced the successful development of their most advanced and refined fifth-generation 10nm-class (1b) DDR5 DRAM technology. They will provide this technology to Intel for their "Intel Data Center Certified memory program." This program serves as the official certification process for memory product compatibility with Intel's fourth-generation Intel Xeon Scalable platform.

SK Hynix's DDR5 DRAM product, with a running speed of up to 6.4Gbps (6.4 gigabits per second), achieves the highest speed available in the current DDR5 DRAM market. It represents a 33% improvement in data processing speed compared to the initial prototypes of DDR5 DRAM. The early-stage prototypes operated at a speed of 4.8Gbps (4.8 gigabits per second), while the highest operating speed defined by JEDEC standards for DDR5 is 8.8Gbps.

Additionally, SK Hynix utilized the "High-K Metal Gate" (HKMG) process in this 1b DDR5 DRAM. This process, which involves a high-k dielectric material on the transistor's insulating film, reduces power consumption by more than 20% compared to 1a DDR5 DRAM. The HKMG technology not only enhances memory speed but also decreases power consumption. Last year in November, SK Hynix introduced the world's first 8.5Gbps LPDDR5X with HKMG technology in mobile DRAM. In January of this year, they also released the 9.6Gbps LPDDR5T mobile DRAM with HKMG technology.

SK Hynix emphasized that the successful development of the 1b technology would enable them to supply high-performance and energy-efficient DRAM products to customers worldwide.

Kim Jong-Hwan, Vice President in charge of SK Hynix's DRAM development, stated, "Just as we successfully applied fourth-generation 10nm-class (1a) DDR5 server DRAM to Intel's 4th Gen Intel Xeon Scalable processors in January this year, becoming the first in the industry to receive certification, we are confident that the verification of this 1b DDR5 DRAM product will also be a success."

Furthermore, SK Hynix revealed that they are concurrently undertaking additional certification processes to adapt the previously verified 1a DDR5 DRAM to Intel's next-generation Intel Xeon Scalable platform.

*HBM3E (HBM3 Extended): SK Hynix has been developing HBM products in the order of first-generation (HBM), second-generation (HBM2), third-generation (HBM2E), and fourth-generation (HBM3). The next-generation product following HBM3 is the fifth-generation HBM3E. SK Hynix plans to prepare HBM3E samples with 8Gbps data transfer performance in the second half of this year and commence mass production next year.

Dimitrios Ziakas, Vice President of Intel's Memory I/O Technology Department, stated, "Intel collaborates closely with the memory industry to ensure compatibility between DDR5 DRAM and Intel platforms. SK Hynix's 1b DDR5 DRAM will be applicable to Intel's next-generation Intel Xeon Scalable platform, marking the first instance of Intel's data center certified memory program in this field."

Moreover, SK Hynix mentioned that they are concurrently conducting additional certification processes to apply the already certified 1a DDR5 DRAM to Intel's next-generation Intel Xeon Scalable platform.