NXP Semiconductors: GaN-based Top Cooling RF Amplifier Modules

NXP Semiconductors is pleased to announce the launch of its latest series of top cooling RF amplifier modules, leveraging GaN technology. These modules, featuring innovative packaging, are specifically designed to cater to the electronic components industry, offering sleeker and lighter wireless products for 5G infrastructure.

With a strong emphasis on product optimization, NXP's RF amplifier modules deliver significant advantages. By reducing the thickness and weight of wireless products by over 20%, these modules contribute to streamlined inventory management and efficient logistics while meeting the demands of the 5G market. Moreover, their implementation aids in mitigating the carbon footprint associated with 5G base station manufacturing and deployment, promoting environmentally conscious practices.

Pierre Piel, Vice President and General Manager of Radio Power at NXP, expressed enthusiasm for the potential impact of top cooling technology on the wireless infrastructure industry. The combination of high-power capability and advanced thermal performance enables these modules to achieve smaller RF subsystems, facilitating the deployment of eco-friendly base stations. By delivering the required network density, NXP's innovation ensures that the full performance advantages of 5G are realized.

NXP's top cooling devices offer a range of distinct advantages. They eliminate the need for dedicated RF shielding, ensuring cost-effectiveness without compromising performance. Additionally, the modules utilize streamlined PCBs, further optimizing their form factor and enhancing ease of integration. Notably, the separation of thermal management from RF design guarantees efficient heat dissipation and optimal performance.

Catering to specific market requirements, NXP's initial series of top cooling RF power modules is tailored for 32T32R, 200W wireless products, operating within the frequency range of 3.3GHz to 3.8GHz. These devices harness the power of NXP's cutting-edge LDMOS and GaN semiconductor technologies, delivering exceptional wideband performance, high gain, and impressive efficiency. With a 31dB gain and 46% efficiency over a 400MHz instantaneous bandwidth, these modules ensure optimal signal amplification and power utilization.

NXP's A5M34TG140-TC, A5M35TG140-TC, and A5M36TG140-TC products now have been officially released. Furthermore, NXP's RapidRF reference board series provides comprehensive support for the A5M36TG140-TC module, ensuring seamless integration and streamlined development processes for distributors and their customers.