Efficient Toshiba 650V SiC Schottky Diodes

Toshiba has recently unveiled its newest offering: a collection of 12 high-tech 650V Silicon Carbide Schottky Barrier Diodes (SBDs) built on third-generation technology. These cutting-edge components are designed to optimize efficiency in industrial applications, such as switch-mode power supplies, electric vehicle (EV) charging stations, and photovoltaic (PV) inverters.

Known as the TRSxxx65H series, these SBDs feature a revolutionary Schottky metal, offering even greater efficiency than their predecessors. The third-generation SiC SBD chips have been meticulously improved, reducing the electric field at the Schottky interface and minimizing leakage current.

One of the standout features of these advanced devices is their impressively low forward voltage (VF) of just 1.2V (typical). Compared to the previous generation, this represents a significant 17% reduction in VF. The latest TRSxxx65H models also boast enhanced performance when it comes to VF and reverse current (IR) ratio, with the typical IR value of TRS6E65H being 1.1μA.

Moreover, these innovative components come with a remarkable capability to handle up to 12A of forward direct current (IF(DC)) and up to 640A of non-repetitive surge current (IFSM) in square wave form. They are available in two types of packaging: TO-220-2L and compact flat DFN8x8 SMD, providing versatility for different applications.

With improved power efficiency and performance, the TRSxxx65H series is poised to revolutionize various industrial equipment applications. Toshiba's dedication to cutting-edge technology ensures that these SBDs will play a pivotal role in shaping the future of industrial efficiency.