Samsung: Unveiling 300+ Layer NAND Next Year

Samsung, the world's leading provider of NAND memory, has unveiled its ambitious roadmap for V-NAND (also known as 3D NAND) development this week. The company has officially confirmed its plan to commence production of the 9th generation V-NAND memory, featuring an industry-leading count of over 300 layers by 2024, a significant milestone in active layer technology.

Jung-Bae Lee, President and Head of Memory Business at Samsung Electronics, outlined in a published article on the Samsung Electronics website, "The ninth generation V-NAND is poised for smooth mass production early next year, distinguished by the highest layer count in the industry, underpinned by a dual-stack architecture."

It is worth noting that Samsung is currently in the advanced stages of developing the 9th generation V-NAND, utilizing a technology that preserves the double-stacking approach initially introduced in 2020. Samsung has not only verified the advancement of its next-generation non-volatile memory technology but also asserted its dominance in active layer count compared to competitors' 3D NAND memory solutions.

The augmentation in layer count is anticipated to significantly enhance Samsung's 3D NAND devices' storage density, translating into improved performance and heightened storage capabilities.

Jung-Bae Lee emphasized, "Samsung is actively engaged in the development of next-generation technologies that create value, including a novel architecture that maximizes V-NAND input/output (I/O) speeds."

In the realm of long-term technological innovation, Samsung is committed to minimizing unit interference, reducing overall profile, and maximizing vertical layers. These innovations are pivotal to Samsung's vision of creating memory solutions with over 1,000 layers of 3D NAND, ensuring unparalleled product relevance across diverse applications, such as data centers and personal computing.