Infineon IRF7855TRPBF: Powering Precision in Electronics
In this article, we'll dive into the intricate details of the Infineon Technologies IRF7855TRPBF, a Trans MOSFET that's redefining power efficiency and performance. From its key features to applications and specifications, we've got you covered.
Overview:
At the core of electronic systems lies the IRF7855TRPBF, a single Quad Drain Triple Source power MOSFET. Designed with precision and powered by HEXFET technology, this enhancement mode N-channel MOSFET sets new standards in the realm of electronic components.
Key Features:
l 60V Maximum Drain Source Voltage for robust performance.
l ±20V Maximum Gate Source Voltage, providing flexibility in control.
l HEXFET Process Technology for enhanced efficiency.
l Operating Junction Temperature ranging from -55 to 150°C for adaptability.
l 12A Maximum Continuous Drain Current for high-power applications.
l Low Maximum Gate Source Leakage Current (100nA) for energy conservation.
l Gull-wing Lead Shape and Surface Mount Mounting for easy integration.
Specifications:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single Quad Drain Triple Source |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4.9 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 12 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 20 |
Maximum Drain Source Resistance (MOhm) | 9.4@10V |
Typical Gate Charge @ Vgs (nC) | 26@10V |
Typical Gate Charge @ 10V (nC) | 26 |
Typical Gate to Drain Charge (nC) | 9.6 |
Typical Gate to Source Charge (nC) | 6.8 |
Typical Reverse Recovery Charge (nC) | 38 |
Typical Input Capacitance @ Vds (pF) | 1560@25V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 120@25V |
Minimum Gate Threshold Voltage (V) | 3 |
Typical Output Capacitance (pF) | 1910 |
Maximum Power Dissipation (mW) | 2500 |
Typical Fall Time (ns) | 12 |
Typical Rise Time (ns) | 13 |
Typical Turn-Off Delay Time (ns) | 16 |
Typical Turn-On Delay Time (ns) | 8.7 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 97 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Typical Gate Plateau Voltage (V) | 5.3 |
Typical Reverse Recovery Time (ns) | 33 |
Maximum Diode Forward Voltage (V) | 1.3 |
Maximum Positive Gate Source Voltage (V) | 20 |
Mounting | Surface Mount |
Package Height | 1.5(Max) |
Package Width | 4(Max) |
Package Length | 5(Max) |
PCB changed | 8 |
Standard Package Name | SO |
Supplier Package | SOIC N |
Pin Count | 8 |
Lead Shape | Gull-wing |
Applications:
The versatility of the IRF7855TRPBF extends across various applications:
l Power Electronics: Ideal for high-power systems due to its 60V Maximum Drain Source Voltage and 12A Maximum Continuous Drain Current.
l Motor Control: Precision control facilitated by ±20V Maximum Gate Source Voltage.
l Switching Power Supplies: HEXFET technology ensures efficient power conversion.
IRF7855TRPBF’s Manufacturer
Infineon Technologies, a pioneering force in semiconductor solutions, brings decades of expertise to the IRF7855TRPBF. With a commitment to innovation, reliability, and performance, Infineon continues to shape the future of electronic components.
Conclusion:
As we conclude our exploration of the Infineon Technologies IRF7855TRPBF, it's evident that this Trans MOSFET stands at the forefront of power and precision. Whether you're designing high-power electronics, motor control systems, or switching power supplies, the IRF7855TRPBF promises unmatched performance. Embrace the future of electronics with Infineon Technologies, where every component tells a story of innovation and excellence.
