Micron Launches 128GB DDR5 RDIMM: 32Gb Single Die Innovation

Micron's Vice President and General Manager of the Compute and Networking Business Unit, Praveen Vaidyanathan, has recently unveiled a groundbreaking product—the Micron 128GB DDR5 RDIMM. This advanced memory solution marks a significant achievement in the realm of data center memory, addressing the escalating demands of compute-intensive workloads by providing essential memory bandwidth and capacity.

Micron's 32Gb DDR5 memory utilizes a cutting-edge die-stacking architecture, delivering exceptional array efficiency and increased single-die DRAM capacity density. The implementation of optimized voltage domains and refresh management features enhances energy efficiency, demonstrating impressive performance within power delivery networks. Additionally, die size optimization contributes to improved manufacturing efficiency for the 32Gb DRAM die with large capacity.

Leveraging AI-driven smart manufacturing technology, Micron's 1β technology node has achieved mature yields at an unprecedented pace in the company's history. Anticipated for release in 2024, the Micron 128GB RDIMM will support platforms with speeds of 4800MT/s, 5600MT/s, and 6400MT/s, with future expansion to platforms supporting speeds of up to 8,000MT/s.

Dan McNamara, Senior Vice President and General Manager of the Server Business Unit at AMD, emphasizes that the Micron 128GB RDIMM will provide increased single-core memory capacity for their latest fourth-generation AMD EPYC processors. This enhancement aims to reduce overall ownership costs for business-critical data enterprise workloads. As AMD introduces the next generation of EPYC processors, the Micron 128GB RDIMM is poised to emerge as a primary memory solution, catering to the needs of memory-intensive applications through its substantial capacity and exceptional single-core bandwidth capabilities.